دیتاشیت BC857B
مشخصات دیتاشیت
| نام دیتاشیت |
BC857B
|
| حجم فایل |
50.591
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
3
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. BC857A
-
Transistor Type:
PNP
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
200mW
-
Transition Frequency (fT):
100MHz
-
DC Current Gain (hFE@Ic,Vce):
125@2mA,5V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
45V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@100mA,5mA
-
Package:
SOT-23
-
Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.